Analysis of the influence of tool radius on single crystal silicon cutting process based on Molecular dynamics

Abstract

Abstract In this paper, a molecular dynamics method is used to construct a simulation model for cutting single crystal silicon with a tool. Through the analysis of phase transition, instantaneous atomic position, temperature, Wigner-Seitz defect and other variables, the influence of tool radius on material deformation is studied. The results show that in the process of cutting single crystal silicon, the contact area between the cutting edge and the single crystal silicon workpiece is the main area of cutting heat generation, and the phase change process from the atomic crystalline state to the amorphous state is reflected in the cutting process of different tool radii The difference is that the amorphous atoms are removed in the form of chips during the cutting process of the sharp-angle tool, while the amorphous atoms are further compressed directly under the tool in the round-angle tool, causing subsurface damage. The chip removal mechanism of sharp tools is shear, and the chip removal mechanism of round tools is shear and extrusion. As the radius of the tool increases, the more atoms are compressed directly below the tool, the worse the surface quality of the machined surface.