Electron transport properties of gallium nitride for microscopic power device modelling
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/193/i=1/a=012005/pdf
Reference16 articles.
1. Large-signal microwave performance of GaN-based NDR diode oscillators
2. A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect
3. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
4. Thermal modeling and measurement of GaN-based HFET devices
5. Undoped AlGaN/GaN HEMTs for microwave power amplification
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices;ECS Transactions;2014-08-08
2. Investigation of electron mobility in GaAs‐based devices using genetic algorithm;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2012-03-02
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