Study of irreversible degradation processes in gate dielectric of MIS structures

Abstract

Abstract In this paper we propose an improved method for accelerated tests of the MIS structure gate dielectric and for studying the irreversible processes in it. This method is based on applying a ramping current load to a sample with a short injection measurement mode between the increments of the current load. This method allows obtaining a time history of the voltage drop across MIS structure at a constant level of measurement injection current for the whole current load range. This time history can be used to find the parameters characterizing irreversible processes of charge degradation such as density and localization of a charge accumulating in the dielectric film, cross-sections of electron and hole traps, nature of the evolution of charge effects and etc.