Calculation and analysis of the features temperature behavior of the electrical conductivity semiconductors GeTe and SnTe near structural phase transition TC

Abstract

Abstract In the article have conducted of the calculation for the temperature behavior of anomalous conductivity of ferroelectric-semiconductors type A4B6 (SnTe and GeTe) near the phase transitions of Tc. The proposed integrated (analytical) model is applicable both to describe temperature behavior of conductivity many-valleys semiconductors GeTe, and type systems the SnTe. Made investigation of the influence of structural phase transition on the conductivity of these systems. The results of the calculations are consistent with data of those experiments.