Preparation of silicon carbide/copper composite by pressureless infiltration

Abstract

Abstract SiC/Cu composite was obtained by pressureless infiltrating Cu into porous SiC ceramic modified by W coating. The influence of W coating on the process of pressureless infiltration, composition, microstructure, thermal conductivity and bending strength of the composites were studied. The results show that the SiC ceramic is obtained by oxidation sintering. The Sol and hydrogen reduction methods can be used for W metallization on the surface of holes in porous SiC ceramic, and small W particles of about 1 μm are evenly distributed on the surface of SiC particles in the ceramic. After the modification of the W coating, a complete infiltration of the Cu melt into the porous SiC ceramic can be achieved under a vacuum of 10-1Pa at 1350 °C. W particles react with SiC at high temperatures during the infiltration process, and WC particles are formed on the Cu-based alloy matrix. As the size of SiC particles increases from 10 μm to 150 μm, the thermal conductivity of the composite increases from 35 W / (m·K) to 45 W / (m·K), but the bending strength rapidly decreases from 200 MPa to 30 MPa.