Molecular dynamics study of tensile-compressive behavior of silicon steel single crystal

Abstract

Abstract In this paper, molecular dynamics was used to model and simulate the silicon steel single crystal. The stress-strain curve of silicon steel single crystal in the process of tension and compression and the evolution law of single crystal structure defects in the process of tension and compression were studied. The results show that the tensile strength and compressive strength of the silicon steel model are not similar, the compressive strength is significantly higher than the tensile strength. The compressive strength is about 2 times of the tensile strength. This conclusion is qualitatively verified through macro experiments. The cluster defects and stress show a positive correlation. The number of dislocations in the compression process is more than that in the tension process, but the dislocation size is smaller than that in the tension process. The research in this paper will provide theoretical support for residual stress detection and reduction.