Optimazation of sputtered n-type GaN/InGaN for Cu(In,Ga)Se2 thin film solar cells

Abstract

Abstract Cu(In1-x Ga x )Se2 thin film solar cell with 3.64% efficiency has been demonstrated by using n-Type GaN/In0.3Ga0.7N. The CIGSe thin film was prepared by co-sputtering with two targets of Cu-In and Ga2Se3+Sb2S3. CIGSe films on the Mo/glass substrates were made by co-sputtering technique at 100 °C with a metal target of Cu-In operated at 15 W and a cermet target of Ga2Se3+Sb2S3 at 55 W, followed by thermal annealing at 600 °C for 1 h. The properties of the CIGSe thin film was studied by measuring the electrical, structural and crystal structure. Solar cell devices were designed by depositing ∼50 nm GaN layer and ∼300 nm In0.15Ga0.85N or In0.3Ga0.7N followed by coating front contact with 300–400 nm indium-tin-oxide (ITO).