Intermediate band formation by InGaAs/GaAs multistacked quantum dots without strain compensation

Abstract

Abstract Quantum dots (QDs) are widely used for enhancing the performance of optical devices. Intermediate-band solar cells that use multistacked QDs can surpass the conversion efficiency of conventional silicon cells. We performed the optical characterization of In0.4Ga0.6As/GaAs multistacked QDs without strain compensation. We used the theoretical and experimental techniques prescribed for intermediate-band solar cells, i.e., photoluminescence (PL) spectroscopy and two-color excitations spectroscopy. The interdot spacings were not uniform and were found to be 15 nm and 7 nm. The results verify the formation of intermediate bands by the multistacked QDs. Using the theoretical studies and experimental results, we performed an in-depth study on the mechanism underlying the formation of intermediate bands by the multistacked QDs and the effect of different interdot spacings.