Structural, Morphological, and Optical Properties of as Deposited and Annealed SnO2 thin film using Thermal Evaporation Technique

Abstract

Abstract The morphological modification of thin film structures has been a focus of metal oxide semiconductor-based sensor research in recent years. Tin oxide is well known for being one of the most essential and researched materials for manufacturing semiconductor gas sensors. In the present work, thermal evaporation technique is used to deposit pure semiconductor tin oxide (SnO2) films on a glass substrate. The as-deposited thin films of SnO2 were annealed for 60 min, 120 min, and 180 min at 450 °C. The structural, morphological, and optical properties of material were investigated by using XRD, FESEM, and UV-Visible techniques as a function of annealing temperature.