Investigation of dielectric properties in tantalum doped AgNbO3 ceramic

Abstract

Abstract Dielectric materials developed from Tantalum (Ta) doped AgNbO3 (ATN) show excellent properties in variety of electronic technologies. In the temperature range of 70 to 400 °C, four major dielectric abnormalities were observed in ATN (x = 0.1) while in ATN (x = 0.2) the maxima of M1-M2 phase shift to low temperature value. ATN ceramics’ dielectric properties dominate temperature and electric field-based performance, which has a major effect on their properties. This study looked into the dielectric properties in ATN.