InAs quantum dots grown by MOCVD in GaAs and metamorphic InGaAs matrixes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/816/i=1/a=012024/pdf
Reference15 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
3. Triple-junction quantum-well solar cells in commercial production
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1. Performance optimization of In(Ga)As quantum dot intermediate band solar cells;Discover Nano;2023-04-20
2. Spin-flip relaxation mechanism in self-assembled quantum dots via phonon emission;Molecular Crystals and Liquid Crystals;2020-04-12
3. Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates;Semiconductors;2018-10-18
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