Manipulation of G1Ba2Cu3O7-x Film Properties by Simply Changing Growth Temperature with RF Sputtering Method

Abstract

Abstract We have investigated the relationship between Jc ( the critical current density) and H (applied magnetic field magnitude) for Gd1Ba2Cu3O7-x((Gd)BCO) films grown from 750 °C to 850 °C by RF sputtering. Measurements of JC(H, θ) (the magnetic-field angular dependence of the critical current density) reveal that film B (800 °C) shows enhanced pinning compared with C (850 °C), A (750 °C) (Gd)BCO films. The film C (850 °C) is the most anisotropic. We speculate that a lot of stacking faults exist in film C (850 °C), based on a board peak along ab-plane and no peak along c axis from the Jc angular measurements together with the small anisotropy parameter γ = 3. The speculation is proved by angular dependence measurement of film C (850 °C) after high temperature process in oxygen.