ALattice parameters and band structure of ternary mixed crystals AlxGa1–xAs from first-principle calculations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/490/i=1/a=012172/pdf
Reference23 articles.
1. Optical Properties of III–V Semiconductors
2. Band parameters for III–V compound semiconductors and their alloys
3. Exciton and polaron properties in GaxIn1−xAs ternary mixed crystals
4. Thermal response to electronic structures of bulk semiconductors
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1. The stability of point defects and their effects on the electronic properties of GaAs/AlGaAs superlattice: a first-principles study;Chinese Physics B;2021-07-22
2. Characterization of polycrystalline In(y)Al(x)Sb(1-x-y) films deposited by magnetron sputtering;Thin Solid Films;2019-12
3. Ab initio molecular dynamics simulation of the radiation damage effects of GaAs/AlGaAs superlattice;Journal of Nuclear Materials;2019-04
4. Band gap engineering of a MoS2 monolayer through oxygen alloying: an ab initio study;Nanotechnology;2018-10-09
5. First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility;Nanoscale Research Letters;2018-09-26
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