The effect of annealing temperature on Ga2O3 film properties

Abstract

Abstract Using Radio Frequency Magnetron Sputtering (RFMS) equipment, gallium oxide (Ga2O3) films were deposited on sapphire substrates. Then the samples were annealed at 700 °C, 900 °C, and 1100 °C for 120 min in the air atmosphere to convert them into β-Ga2O3 films with different crystalline quality. The effects of annealing temperature on the properties of β-Ga2O3 thin films were investigated. The crystal structure and surface morphology were tested by X-ray Diffraction (XRD), absorption spectroscopy, and Atomic Force Microscopy (AFM). The results obtained show that, within a certain range, as the annealing temperature increases, the intensity of the XRD peaks increases, the Full Width at Half Maximum (FWHW) – decreases. The crystal grains “engorge” as the temperature rises, and the degree of crystallinity of the samples becomes better.