Design of class f reconfigurable power amplifiers

Abstract

Abstract With the rapid development of mobile communication technology, RF amplifier requirements becoming higher, miniaturization, high efficiency and multi-band have gradually become a research hotspot. Based on these hot research directions, this paper designs a dual-band reconfigurable power amplifier. The input of the amplifier adopts a stepped impedance matching network, which has a good matching effect in the 1.6 - 2.8 GHz band. The output is switched by a single-knife double-throw switch to the corresponding band output matching network to achieve the fast switching of different frequency bands. The RF amplifier tube is designed by using Cree’s GaN chip CGH40010F, which has an additional power efficiency of more than 60% in the frequency range of 1.7 - 1.9 GHz and 2.5 - 2.7 GHz bands, a gain of about 12 - 14 dB and a saturated output power of more than 40 dBm. This design has the features of high efficiency, high gain, miniaturization and multi-band, which is applicable to the mobile communication system.