Author:
Shaker Abbas Sabah,Khadayeir Abdalhussain A.
Abstract
Abstract
In this paper znO thin film, has been deposited using DC sputtering technique, then the thin film has been characterized by XRD, the results showed that the strongest peak was at 36.4137 degree, FWHM was at 0.1779 degree, lattice constant was 2.46537 A° and the average grain size was 49.10 nm. AFM analysis showed that the increasing of pressure sputtering to increase of roughness average from (6.53 to 8.32) nm, root mean square from (7.67 to 9.63) nm but ten points height decreased from (28.6 to 16.6) at 3*10−3, 6*10−3and 9*10−3 mbar respectively.
Subject
General Physics and Astronomy
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