Recent progress in diluted ferromagnetism for spintronic application

Abstract

Abstract With the continuous in-depth research of spintronics, the manufacture of high-performance magnetic random access memory devices and electronic devices that are more energy-efficient and generate less heat has received extensive attention. The traditional ferromagnet TbMnO3 is basically Tc at room temperature, which seriously limits its application. Since the discovery of diluted magnetic semiconductor materials at room temperature, such as AlNTiO2, ZnO, SnO2, etc., they have received increasing attention. Although these dopants can form ferromagnetism above-room temperature, the ferromagnetic mechanism and ferromagnetic properties are different. In this regard, we reviewed the current progress in the research on above room temperature dilute magnetic semiconductor materials; discussed the ferromagnetic mechanism of dilute magnetic semiconductors; summarized the problems and challenges, and advantages and disadvantages of different kinds of dilute magnetic semiconductor materials used in new memory devices; and prospected the application potential of spintronic devices.