Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/700/i=1/a=012028/pdf
Reference11 articles.
1. Dilute III-V Nitride Semiconductors and Material Systems
2. Observation of a 0.7eV electron trap in dilute GaAsN layers grown by liquid phase epitaxy
3. Structural and electrical characteristics of InGaAsN layers grown by LPE
4. Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers
5. Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells
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1. Effect of growth temperature on nitrogen incorporation into GaAsN during liquid-phase epitaxy;Journal of Physics: Conference Series;2022-03-01
2. Experimental and theoretical study of novel BGaAs/GaAs single quantum well for photonic applications;Vacuum;2020-03
3. New investigation of electronic properties of BGaAs/GaAs single quantum well for photonic applications;Optik;2020-03
4. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16
5. Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications;Materials Research Express;2019-08-28
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