Study of the morphology of Ge quantum dots grown by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Study of the morphology of Ge quantum dots grown by liquid phase epitaxy

Published:2016-03 Issue: Volume:700 Page:012043
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Maronchuk I I,Sanikovich D D,Nichev H,Dimova-Malinovska D

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/700/i=1/a=012043/pdf

Reference11 articles.

1. Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

2. Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

3. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

4. Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solar Cells: Current State and Development Prospects;ENERGETIKA. Proceedings of CIS higher education institutions and power engineering associations;2019-04-04

2. Improvement of growing of Ge QDs by the method of liquid phase epitaxy;Journal of Physics: Conference Series;2017-01

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