Structural and Optical Properties of nanostructured hybrid LiNbO3/Silicon wafer for Fabricating Optical Modulator

Abstract

Abstract In this paper, a tattoo removal Q switching Nd: YAG laser, with a 6 nanosecond pulse duration, 2000 mJ power, frequency of pulses of 5 Hz was used to deposit of layer by layer of Silicone oxide, pure silicone, and lithium niobate for fabricated an optical modulator. The deposited layer by layer samples were analysed and characterized using the (XRD) X-ray diffraction, optical properties (UV-Vis spectroscopy) and photoluminescence (PL), and Atomic force microscopy AFM. Then we investigated of the deposited layers using. The XRD results showed the existence of different tops for all classes that have been deposited, Also, the optical and luminous results showed that only two peaks appeared, namely the top of the lithium niobate layer at the violet wavelength region with the limits of 368 to 381 nm, as well as the top of the silicon oxide layer within the middle of the visible wavelengths range and within the limits of 551 nm.