Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation

Abstract

Abstract In this paper, we consider the 7×7 to 5×5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of the critical thickness of the 7×7 to 5×5 superstructure transition on the substrate temperature are obtained for the first time.