Author:
Vyacheslavova E A,Morozov I A,Gudovskikh A S,Uvarov A V,Baranov A I,Kudryashov D A
Abstract
Abstract
In this paper, we study the effect of the height and diameter of vertically aligned silicon structures on their optical properties. Structures with different geometry were formed using nanosphere lithography and dry etching. Nanosphere lithography was realized with 0.9 and 2 μm latex spheres. The etching process was carried out through a formed mask (template) composed of 0.9 and 2 μm latex spheres, respectively. The diameter of the spheres and the etching time determined the size of the formed structures and their optical properties. A significant reduction of the total reflection with height as well as blue shift of the minimum with diameter decrease were observed.
Subject
General Physics and Astronomy
Reference6 articles.
1. The study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching;Morozov;J. Phys. Stat. Sol.,2019
2. An overview of high-aspect process silicon etching;Zapevalin;J. Modern technics and technologies,2014
3. Mechanisms of silicon etching in fluorine-and chlorine-containing plasmas;Flamm;J. Pure Appl. Chem.,1990
4. Kinetics and mechanisms of chemical reactions is nonoquilibrium-plasma etching of silicon and silicon compaunds;Vinogradov;J. Vacuum,1982
5. Nanosphere Lithography: A Powerful Method for the Controlled Manufacturing of Nanomaterials;Colson;J. of Nanomaterials,2013
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