Author:
Gridchin V O,Kotlyar K P,Reznik R R,Borodin B R,Kudryashov D A,Alekseev P A,Cirlin G E
Abstract
Abstract
The work is devoted to the study of electrical properties of InGaN nanostructures with branched morphology (NSs) on p-type Si substrates. It was found that the IV curves between InGaN NSs and p-Si are close to linear, which could indicate a tunneling conductivity. Such unique structures as InGaN NSs on p-Si can be used as building blocks for water splitting devices and tandem solar cells.
Subject
General Physics and Astronomy