Method for analyzing the electrophysical properties of semiconductor quantum dots

Abstract

Abstract Some important properties of the InSb and CdSe quantum dots, such as size and energy spectrum, were studied by method of normalized differential tunneling current-voltage characteristics. The results of size evaluation are qualitatively and quantitatively consistent with the results obtained by TEM and analysis of spectral dependence of absorption coefficient and luminescence with an error less than 15%. During the study it was also shown, that method of normalized differential tunneling current-voltage characteristics also allows us to analyze the energy spectrum of semiconductor quantum dots (position of the first three energy levels).