Author:
Rochas S S,Novikov I I,Babichev A V,Gladyshev A G,Kolodeznyi E S,Karachinsky L Ya,Bobretsova Yu K,Klimov A A,Shernyakov Yu M,Zhukov A E,Egorov A Yu
Abstract
Abstract
Two laser heterostructures with active region based on seven InGaAs quantum wells and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edge-emitting laser diodes fabricated from grown laser heterostructures were studied and compared.
Subject
General Physics and Astronomy