Preparation of Si substrates for monolithic integration of III−V quantum dots by selective MBE growth

Abstract

Abstract A new method for nanopit formation by molecular-beam epitaxy (MBE) on different silicon substrates has been investigated. The dependence of the shape and depth of the nanopits on substrate orientation and doping type has been studied. The samples with an array of nanopits with 25 nm depth and (2-6)·108 cm−2 density for subsequent monolithic selective growth of quantum dots (QD) have been created.