The dependence of recombination in GaAs solar cells on the number of included GaInAs quantum objects

Abstract

Abstract The experimental characteristics of GaAs p-i-n structures with InGaAs quantum objects (QOs) have been investigated. The study of electroluminescence spectra has shown that an increase of the number of QOs layers leads to relative increase in electroluminescence intensity from QOs and decrease it from the GaAs matrix. The observed increase in QOs recombination has resulted in a drop of open circuit voltage. It has been shown that recombination through deep levels in the QOs begins to dominate over recombination in the matrix at lower number of QOs layers than that through band-to-band recombination.