Author:
Balakirev S V,Solodovnik M S,Eremenko M M,Chernenko N E,Ageev O A
Abstract
Abstract
In this paper, the results of the simulation of the In/AlGaAs growth on nanopatterned surfaces using modified analytical–Monte Carlo model are presented. The surface density of nanostructures is demonstrated to slightly decrease with increasing Al content. A decrease of an interhole distance leads to the occupation of a small part of a hole which can be prevented by a decrease of the hole volume. The best localization of In nanostructures on AlGaAs surfaces nanopatterned with holes at a distance of more than 125 nm can be achieved at a temperature of 300°C or higher. A decrease in temperature requires a sufficient decrease of an interhole distance to avoid nucleation beyond predefined positions.
Subject
General Physics and Astronomy
Cited by
1 articles.
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