Author:
Chelny A,Akhmerov Yu,Savchuk A,Zharkova A,Rabinovich O,Mezhenny M,Aluyev A,Zakusov M,Orlova M,Murashev V,Didenko S
Abstract
Abstract
The AlGaInAs structure was successfully grown on the InP substrate by MOCVD method. The active region was studied by Auger spectroscopy. The thicknesses and compositions of the quantum wells did not coincide with the theoretical ones. The mathematical model which correlate with investigation results is proposed.
Subject
General Physics and Astronomy