Normally-off GaN Transistors for Power Applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/494/i=1/a=012001/pdf
Reference13 articles.
1. A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT
2. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
4. Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
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1. Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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3. Modeling of Enhancement-Mode GaN-GIT for High-Power and High-Temperature Application;IEEE Transactions on Electron Devices;2020-02
4. Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs;Applied Physics Express;2019-11-13
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