Abstract
Abstract
In this paper, a highly linear complex filter in SOI X-FAB 180 nm technology is proposed for 25 MHz bandwidth with 25 MHz center frequency. Third harmonic compensation technique is used for transconductance amplifier design. Reactance transform is used for the filter synthesis. Layout design is discussed. Simulations show THD better than -75 dB @ 25 MHz 1 Vpp for temperature range of -40 to +200 °C.
Subject
General Physics and Astronomy