Author:
Rebrov A K,Timoshenko N I,Emelyanov A A,Yudin I B
Abstract
Abstract
The gas-jet diamond deposition with the activation of H2 + CH4 mixture by microwave discharge has been implemented. The maximum crystal size was observed at the substrate temperature of 850°C. The dependence of a film structure on the substrate temperature has been established. Diamond coating was received at a low substrate temperature (524°C).
Subject
General Physics and Astronomy
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献