Author:
Kotlyar K P,Vershinin A V,Reznik R R,Pavlov S I,Kudryashov D A,Zelentsov K S,Mozharov A M,Karaborchev A A,Mukhin I S,Soshnikov I P,Cirlin G E
Abstract
Abstract
The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.
Subject
General Physics and Astronomy
Cited by
1 articles.
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