Measurement and analysis of the recombination coefficients distribution on the area of light-emitting InGaN/GaN heterostructures

Abstract

Abstract A method and an installation for evaluation the profile of distribution of recombination coefficients and current density over the area of light-emitting heterostructures at low injection levels based on local values of the 3 dB frequency are described. Using the example of measuring the parameters of commercial blue InGaN/GaN-based LEDs, it is shown that the current density is higher in those areas of the chip where the 3 dB frequency is lower.