Monolith GaAsP/Si dual-junction solar cells grown by MBE-Reference-Cited by-同舟云学术

Monolith GaAsP/Si dual-junction solar cells grown by MBE

Published:2019-12-01 Issue:1 Volume:1410 Page:012040
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Sobolev M S,Ilkiv I V,Lazarenko A A,Mizerov A M,Nikitina E V,Pirogov E V,Timoshnev S N,Baranov A I,Bouravleuv A D

Abstract

Abstract The growth of monolith GaAsP/Si dual-junction solar cells on Si substrates by molecular-beam epitaxy is demonstrated. The technological method for the formation of a highly doped tunnel p+/n+ junction was developed. An obvious increase in the value of the open-circuit voltage indicating the contribution of the top-junction in the total open-circuit voltage monolithic dual-junction solar cells was found.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/1410/1/012040/pdf

Reference14 articles.

1. 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

2. Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler

3. Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

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