Author:
Rochas S S,Novikov I I,Gladyshev A G,Kolodeznyi E S,Maximov M V,Zubov F I,Shernyakov Yu M,Karachinsky L Ya,Zhukov A E,Denisov D V,Egorov A Yu
Abstract
Abstract
The optical gain performance of 1530-1565 nm laser diodes with active regions containing p-doped barrier layers has been investigated. We have studied the threshold current density and differential quantum efficiency in wide temperature range and compared modal gain behaviour of laser diodes made of heterostructure with delta-doped barrier layers by carbon at level of 1012 cm-2 and heterostructure with undoped barrier layers.
Subject
General Physics and Astronomy