Investigation of optical properties of In(Ga)As/GaAs mesa structures with active region based on quantum wells, quantum dots, and quantum well-dots-Reference-Cited by-同舟云学术

Investigation of optical properties of In(Ga)As/GaAs mesa structures with active region based on quantum wells, quantum dots, and quantum well-dots

Published:2019-12-01 Issue:1 Volume:1410 Page:012157
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Dragunova A S,Kryzhanovskaya N V,Maximov M V,Mintairov S A,Kalyuzhnyy N A,Moiseev E I,Mukhin I S,Tikhomirov V G,Zhukov A E

Abstract

Abstract In this work photoluminescence (PL) of mesa-structures that contain three different types of active regions based on InGaAs/GaAs quantum wells (QWs), InAs/InGaAs/GaAs quantum dots (QDs) and InGaAs/GaAs quantum well-dots(QWD) is studied. Comparative analysis of the PL intensity obtained at different temperatures and optical excitation powers on mesa diameter is done.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/1410/1/012157/pdf

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