Author:
Uvarov A V,Baranov A I,Morozov I A,Kudryashov D A,Maksimova A A,Vyacheslavova E A,Gudovskikh A S
Abstract
Abstract
This work is devoted to the study of the deposition of a-Si:H by the PECVD method in continuous and pulsed regime on test structures in the form of trenches with a high aspect ratio. The thicknesses of the layers obtained in these modes were investigated by the method of scanning electron microscopy. It was shown that the layers obtained in the pulsed mode, as compared with the continuous one, have better conformity.
Subject
General Physics and Astronomy