Author:
Kudryashov D A,Baranov A I,Uvarov A V,Morozov I A,Monastyrenko A O,Gudovskikh A S
Abstract
Abstract
In this work last results on optimization of (p)a-Si:H/p-Si ohmic contact made by PECVD method are presented. A strong effect of growth temperature and trimethylboron flow on charge carriers transport was demonstrated. An optimized (p)a-Si:H layer also was successfully applied as an emitter layer to a heterojunction solar cell fabrication where a measured open circuit voltage of 0.65 V was obtained.
Subject
General Physics and Astronomy