Development of epitaxial PbS layers obtaining method for photoelectric transducers

Abstract

Abstract Photoelectric transducers are a semiconductor device that converts photonic energy into electrical energy. This paper describes obtained by the hotwall epitaxy method epitaxial PbS layers technology. Materials, methods, technological parameters of synthesis were selected and substantiated. A theoretical model of the p-n transition has been developed. The calculation of the main parameters has been done. The hotwall epitaxy method was chosen for the synthesis, because it allows to obtain layers with required properties in a single technological cycle with an economical consumption of material. BaF2 was chosen as the substrate, because in this case a smaller difference in the identity periods and the layer and the substrate thermal expansion coefficients is achieved.