Computer simulations of solar cells based on silicon/boron phosphide selective contacts

Abstract

Abstract Silicon solar cells with selective contacts based on boron phosphide (BP) demonstrate a high potential according to simulation. However, the influence of defects created at the BP/Si interface during BP deposition is a critical issue for solar cell performance. The computer simulations were performed to understand how the defects in the near-surface region and at the interface affect the photovoltaic properties. Calculations of the dependence of the characteristics of solar cells on parameters such as the density of interface states, the concentration of defects in the near-surface region, and its width were made.