Dominant radicals in electron cyclotron resonance plasma CVD-Reference-Cited by-同舟云学术

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Dominant radicals in electron cyclotron resonance plasma CVD

Published:1996-05-01 Issue:2 Volume:5 Page:260-264
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Zhang Mei,Nakayama Yoshikazu

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference21 articles.

1. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma

2. Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method

3. Characteristics of Hydrogenated Amorphous Silicon Films Prepared by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition Method and Their Application to Photodiodes

4. Relationship between film quality and deposition rate for a-Si:H by ECR plasma CVD

5. Behavior of charged particles in an electron cyclotron resonance plasma chemical vapor deposition reactor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma ion sources CVD plasma aspects, limits and possibilities;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04

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