Etching characteristics of Pb(Zr,Ti)O3, Pt, SiO2and Si3N4in an inductively coupled HBr/Ar plasma
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Reference30 articles.
1. Ferroelectric Memories
2. A model for reactive ion etching of PZT thin films
3. Inductively coupled plasma etching of a Pb(ZrxTi1−x)O3 thin film in a HBr/Ar plasma
4. Dry Etching Characteristics of Pb(Zr,Ti)O3Films in CF4and Cl2/CF4Inductively Coupled Plasmas
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