Abstract
Abstract
Laser irradiation on the samples of electronic/optical materials is a versatile tool to modify the structural morphology without changing their composition. We have explored the micro-structural changes (e.g., crystal size, defect state density, etc) induced by the He-Ne laser in Se80Te10In10 alloy. A systematic and detailed investigation of the laser-induced effects in Se80Te10In10 alloy has been undertaken using combinations of microscopic and macroscopic probe techniques like Differential Scanning Calorimeter (DSC), x-ray diffractometer (XRD), Scanning electron microscope (SEM), Transmission electron microscope (TEM). Investigations of the structural, thermal, electrical, and spectroscopic characterization of the Se80Te10In10 alloy have been compared before and after laser exposure. The glass transition/crystallization enthalpies and dielectric constant/loss are significantly increased after laser exposure. The results of structural characterization show that exposure to laser light causes crystal growth which plays a major role in modifying other characteristics of Se80Te10In10 alloy. The comparison of the present results with the literature confirms that laser exposure is a more effective way than the compositional variation approach for tailoring the dielectric properties of the present glass-ceramic sample.
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics