First-principles study of vacancy-impurity (C, N, O) interactions in vanadium

Abstract

Abstract Interstitial impurities of C, N, and O typically exist in V and its alloys, which have significant effects on the structure and properties of the materials due to their strong interaction with the vacancies. In this study, the structure and energy properties of vacancy-impurity complexes in V are comprehensively investigated by first principles calculations. The effects of impurity concentration and temperature on the concentration distribution of the complexes were studied using statistical methods. The results showed that the Vac n X 2 complexes exhibit a high sequential binding energy. There is an evident mutual attraction between the vacancy and the O atom, and it has a higher affinity than the C or N atom. The simple defect complexes of Vac 1 X 1–2 have always been the most abundant type of complex defect in V. The trapping effect of vacancy on C, N, and O atom is very significant at low temperatures rather than at high temperatures. This study would broaden the understanding of vacancy-impurity interactions in vanadium and provide new insights into the influence of C, N, and O on vacancy defect concentrations.