Effect of memristor’s potentiation-depression curves peculiarities in the convergence of physical perceptrons

Abstract

Abstract Neuromorphic computing aims to emulate the architecture and information processing mechanisms of the mammalian brain. This includes the implementation by hardware of neural networks. Oxide-based memristor arrays with cross-bar architecture appear as a possible physical implementation of neural networks. In this paper, we obtain experimental potentiation-depression (P-D) curves on different manganite-based memristive systems and simulate the learning process of perceptrons for character recognition. We analyze how the specific characteristics of the P-D curves affect the convergence time -characterized by the EPOCHs-to-convergence (ETC) parameter- of the network. Our work shows that ETC is reduced for systems displaying P-D curves with relatively low granularity and non-linear and asymmetric response. In addition, we also show that noise injection during the synaptic weight actualization further reduces the ETC. The results obtained here are expected to contribute to the optimization of hardware neural networks based on memristors cross-bar arrays.