Penning ion source based surface modification of titanium by nitrogen ion implantation

Abstract

Abstract The nitrogen ions of the Penning ion source are bombarded on commercially available pure titanium substrates in pulses of about 5.6 μs duration. A thin film (∼500 nm) of multiphase titanium nitride is produced without additional heating of the substrate. The surface modification is studied for various energies of implanted ions at a low flux density. The 2.4 × 109 ions of specific energy are bombarded on the sample in each single pulse of the ion. Each sample is exposed to one thousand such pulses at a repetition rate of 0.1 Hz. The corresponding energy flux was transferred to the sample, promoting the growth of a thin nitride layer. X-ray diffraction (XRD) analysis demonstrates the formation of a monocrystalline multiphase titanium nitride thin film. The XRD spectra show the multiphase reflections of Ti4N2 (111), Ti9N3.87 (009), and Ti12N7 (0012) that depend on the energy of the ion beam. Ti4N2 is observed to be the dominant phase in this ion implantation process. The morphological and compositional changes of ion implanted samples are investigated using field emission scanning electron microscopy (SEM) along with energy dispersive x-ray spectroscopy (EDX). Raman scattering analysis of treated samples verified the XRD results. The penetration depth of nitrogen ions inside the titanium is calculated using the SRIM code. Vickers hardness has improved three times compared to the original sample.