Numerical study of MoSe2-based dual-heterojunction with In2Te3 BSF layer toward high-efficiency photovoltaics

Abstract

Abstract In this study, molybdenum diselenide (MoSe2)-based dual-heterojunction with Indium Telluride (In2Te3) as an absorber and a back surface field (BSF) layers with Al/ITO/CdS/MoSe2/In2Te3/Ni heterostructure has been studied by SCAPS-1D simulator. To explore the potentiality of layered materials in photovoltaic devices, a detailed investigation has been executed on the CdS window, MoSe2 absorber, and In2Te3 BSF layers at varied layer thicknesses, carrier concentrations, interface and defect densities, resistances, and operating temperatures. The photoconversion efficiency (PCE) of 24.78% with short circuit current J sc of 30.55 mA cm−2, open circuit voltage V oc of 0.95 V, and fill factor FF of 85.5% were obtained in the reference cell (without the In2Te3 BSF layer), while a notably improved PCE of 29.94% (5.16% higher) with J sc of 31.06 mA cm−2, V oc of 1.10 V, and FF of 87.28% was achieved by inserting the In2Te3 BSF layer. With a favorable band alignment and almost similar chemical and physical properties as transitional metal dichalcogenides (TMDCs) materials, the proposed dual heterostructure with CdS, MoSe2, and In2Te3 exhibits huge potential as a photoactive material and paves a pathway for the fabrication of uniquely layered material-based thin, flexible high-efficiency solar cells.