Penetration depth and critical fields in superconducting NbTi thin films grown by co-sputtering at room temperature

Abstract

Abstract We present a study on the superconducting properties of 300 nm thick NbTi thin films grown by co-sputtering on silicon substrates at room temperature. The samples exhibit a Nb (50 at%) and Ti (50 at%) chemical composition, revealing a polycrystalline structure textured along the (110) axis of the body-centered cubic structure. The measured superconducting critical temperature (T c ) was 9.65 K, and the upper critical field extrapolated to zero temperature reached approximately 15 T, resulting in a coherence length at zero temperature of approximately 4.7 nm. The penetration depth was determined through local magnetic force microscopy measurements conducted at temperatures from 4.25 to 7 K. The obtained values range from (250 ± 15) nm at 4.25 K to (370 ± 20) nm at 7 K. Extrapolating these measurements to zero temperature, we obtained an estimated value of (230 ± 20) nm. To extend the performance and potential applications of NbTi, we additionally grew a 150 nm thick sample on flexible polyimide. In this case, we observed that the films preserved their superconducting properties, displaying a decrease in T c to 9.2 K and a similar upper critical field compared to samples grown on silicon. The feasibility of growing NbTi alloys at room temperature, with superconducting parameters comparable to or superior to metallic Nb for the upper critical field, renders this system promising for cryogenic applications, particularly in the development of high-performance electronic devices on both rigid and flexible substrates.