Linearity and RF analysis of double gate reverse T-shaped TFET with L-shaped pocket across the Si-Ge source region

Abstract

Abstract In this work, a comprehensive investigation of the twin gate or double gate reverse T-shaped channel TFET (RT-DG-TFET) along with the heavily doped pocket at the source-channel interface is portrayed. Here the pockets have been placed in various places on the device like vertical and horizontal pockets across the source and the channel region, a pocket at the center of the source, a pocket near to tunneling junction, and an L-shaped pocket across the source-channel interface. All these structures are investigated and the pocket is doped with P-type impurities. Linearity and RF analysis are investigated using the Synopsis TCAD Sentaurus tools and compared among all these structures. The L-shaped pocket shows better results compared to others.